Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing
Creators
- 1. National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)
Description
We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications
Additional details
Identifiers
- DOI
- 10.1063/1.4937922;
- arXiv
- arXiv:1509.09280v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 108
- Journal Issue
- 1
- Journal Page Range
- p. 012601-012601.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47059316
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- AMPLIFIERS; CURRENTS; FREQUENCY MIXING; GAIN; GHZ RANGE 01-100; INDUCTANCE; NOISE; OPERATION; PHOTONS; SIGNALS; SILICON; TRAVELLING WAVES; WAVEGUIDES
- Descriptors DEC
- AMPLIFICATION; BOSONS; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; EQUIPMENT; FREQUENCY RANGE; GHZ RANGE; MASSLESS PARTICLES; PHYSICAL PROPERTIES; SEMIMETALS
Optional Information
- Notes
- (c) 2016 U.S. Government