Quenched-in defects in thermally treated and pulsed laser irradiated silicon

Quenched-in defects in pulsed laser irradiated n- und p-type silicon have been studied using deep level transient spectroscopy (DLTS). Two predominant defect states at Ev +0.32 eV and Ec -0.15 eV are found to be introduced in p- and n-type silicon with high carbon concentration, respectively. The defect distribution has a maximum within the depletion region of Schottky diodes. The defect concentration is linearly dependent on the laser fluence above some threshold value. The results are discussed in relation to the carbon concentration dependence, and are compared with those obtained by rapid quench from high temperature into water. (author) 14 refs., 7 figs