Published March 1993 | Version v1
Journal article Metadata-only

Physicochemical properties of cadmium indate

Creators

  • 1. AN SSSR, Moscow (Russian Federation). Inst. Khimii Silikatov

Description

The optimal conditions for the synthesis of CdIn2O4, i.e. annealing at 1200 K for 2 h - were chosen. Specific electric conductivity of cadmium indate in the temperature range of 300-1300 K in the air and in argon was measured. It is ascertained that it is a degenerated semiconductor. Behaviour of differential thermo e.m.f. of CdIn2O4 in the air and in the temperature range of 550-1360 K was studied and concentration of free charge carriers was calculated. 11 refs., 4 figs

Additional details

Additional titles

Original title (Russian)
Физико-химические свойства индата кадмия

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
29
Journal Issue
3
Journal Page Range
p. 397-399.
ISSN
0002-337X

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
25021371
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CADMIUM OXIDES; CARRIER DENSITY; CHARGE CARRIERS; CONTROLLED ATMOSPHERES; ELECTRIC CONDUCTIVITY; INDIUM OXIDES; SEMICONDUCTOR MATERIALS; SYNTHESIS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; THERMOELECTRIC PROPERTIES; TIME DEPENDENCE
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; HEAT TREATMENTS; INDIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TEMPERATURE RANGE