Published March 15, 1986
| Version v1
Journal article
Strain-induced metal-insulator transition of the Ge(111) surface
- 1. Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Description
The Ge(111) surface was observed to be metallic under compressive strain, while normally it is semiconducting in the fully annealed state. The compressive strain was produced by the lattice mismatch between Ge and Si for epitaxial Ge films on Si(111). When the strain is relieved, the metallic surface becomes semiconducting
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 33
- Journal Issue
- 6
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 4421-4423
- ISSN
- 0163-1829
- CODEN
- PRBMD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17049803
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- EPITAXY; GERMANIUM; METALS; MOLECULAR BEAMS; PHASE TRANSFORMATIONS; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SURFACE PROPERTIES
- Descriptors DEC
- BEAMS; ELEMENTS; EMISSION; MATERIALS; SECONDARY EMISSION; SEMIMETALS