Published October 2014 | Version v1
Journal article

Influence of free carriers on exciton ground states in quantum wells

  • 1. Nuclear Physics Institute, 350000 St. Petersburg (Russian Federation)
  • 2. Ioffe Physical Technical Institute, 194021 St. Petersburg (Russian Federation)
  • 3. Spin Optics Laboratory, St. Petersburg State University, 198904 St. Petersburg (Russian Federation)
  • 4. CEA-CNRS Group "Nanophysique et Semiconducteurs", Institut Néel, CNRS and Universite Joseph Fourier, 25 Avenue des Martyrs, 38042 Grenoble (France)

Description

The influence of free carriers on the ground state of the exciton at zero magnetic field in a quasi-two-dimensional quantum well that contains a gas of free electrons is considered in the framework of the random phase approximation. The effects of the exciton–charge-density interaction and the inelastic scattering processes due to the electron–electron exchange interaction are taken into account. The effect of phase-space filling is considered using an approximate approach. The results of the calculation are compared with the experimental data. - Highlights: • We discussed the effect of free carriers on the exciton ground state in quantum wells. • The processes of exciton–electron scattering become the most important for excitons in doped QWs. • The direct Coulomb scattering can be neglected. • The most important becomes the exchange inelastic exciton–electron scattering

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2014.04.039

Additional details

Identifiers

DOI
10.1016/j.jlumin.2014.04.039;
arXiv
arXiv:1312.0773v1;
PII
S0022-2313(14)00278-6;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
154
Journal Page Range
p. 310-315
ISSN
0022-2313
CODEN
JLUMA8

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.