Published January 2007 | Version v1
Journal article Metadata-only

Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy

Creators

  • 1. Key Laboratory of Advanced Materials and Rheological Properties of Ministry of Education, Institute of Modern Physics, Xiangtan University, Xiangtan 411105, Hunan (China) and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai (China)
  • 2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai (China)
  • 3. Institute for materials research, Tohoku University, Sendai 980-8577 (Japan)

Description

Raman scattering has been used to study lattice defects induced by non-stoichiometry in indium nitride films grown by plasma-assisted molecular beam epitaxy with different In/N ratios. A gap mode located at about 375 cm-1 is observed in InN films grown at low In/N ratios. This is in good agreement with the recursion method calculation for the In vacancy-induced vibration mode. In addition, a spatial correlation model has been used to estimate the lattice disorder in InN samples. The shortest correlation length is L = 5.9 nm

Additional details

Identifiers

DOI
10.1016/j.actamat.2006.07.031;
PII
S1359-6454(06)00571-4;

Publishing Information

Journal Title
Acta Materialia
Journal Volume
55
Journal Issue
1
Journal Page Range
p. 183-187
ISSN
1359-6454
CODEN
ACMAFD

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38037825
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
FILMS; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; OSCILLATION MODES; PLASMA; RAMAN EFFECT; STOICHIOMETRY; VACANCIES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EPITAXY; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; POINT DEFECTS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.