Analysis of impurity profiles in ion-doped silicon

The authors perform a comparative analysis of the use of Pearson-4 and double semi-Gaussian profiles for description of experimental data on ion doping of B, P, and As, in amorphous alpha- and polycrystalline poly-Si. The distribution moments obtained are compared with theoretical estimates which make it possible to accurately describe the profiles of boron (B+), phosphorus (P+), and Arsenic (As+), ion implantation in Si, if the Pearson-4 distribution is used for B and the double semi-Gaussian for P; for accurate description of As ion implantation profiles in Si, interpolation of the experimental moments must be used