Published June 2004 | Version v1
Journal article

Depth characterization of nm-layers by low energy ion scattering

Description

Layers with a thickness in the nm range are of growing importance in science and technology. We describe, how the thickness and growth modes of such nm-layers can be characterized by time-of-flight low energy ion scattering (TOF-LEIS), when all backscattered projectiles are taken into account. As examples, Cu evaporated on an Al2O3 and on a PET target with a nominal film thickness of about 1nm are analyzed by means of TOF-LEIS using H and He ions in the keV range as projectiles

Additional details

Identifiers

DOI
10.1016/j.nimb.2004.01.123;
PII
S0168583X0400151X;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
219-220
Journal Issue
4
Journal Page Range
p. 578-583
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
16. international conference on ion beam analysis
Dates
29 Jun - 4 Jul 2003
Place
Albuquerque, NM (United States)

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.