Impact of patterning processes on spin Hall magnetoresistance in Pt/YIG structures

The influence of patterning processes on spin Hall magnetoresistance (SMR) in Pt/Y₃Fe₅O₁₂ (YIG) structure was studied. The SMR can be significantly modified by Ar-ion etching YIG films surface for sample fabricated by negative resist process. In contrast, for samples fabricated by the positive resist process, the Ar-ion etching on YIG films surface has little impact on SMR. The largest SMR was observed in the former without Ar-ion etching YIG surface and it exhibits a higher temperature sensitivity. Moreover, the enhancement of the anomalous Hall effect was observed after Ar-ion etching the YIG surface during different fabrication processes. (author)