In0.53Ga0.47As metal-semiconductor-metal photodetector using proton bombarded p-type material

Metal-semiconductor-metal (MSM) photodetectors have been fabricated using as-grown and proton-bombarded p-type In0.53Ga0.47As. Proton bombardment caused a decrease in the dark current, an increase in the breakdown voltage, and an improvement in the speed of the MSM detector. The dark current of the MSM detector with 3x1015 cm-3 proton bombardment is 10 nA at 2 V and 300 nA at 5-V bias. The dc responsivity is 0.7 A/W and impulse response full width at half maximum is 160 ps for 1.3 μm radiation at 5 V bias