Published December 15, 2004 | Version v1
Journal article

Time resolved CoSi2 reaction in presence of Ti and TiN cap layers

  • 1. CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania (Italy)
  • 2. Dipartimento di Fisica e Astronomia dell'Universita di Catania, Via S. Sofia 64, 95123 Catania (Italy)

Description

In this work we study the phase transition of Co/poly-Si layers capped with Ti or TiN films. Silicide reaction has been performed by isothermal annealing in the temperature range between 420 and 510 deg. C and studied by measuring the sheet resistance during time. The time interval associated to the CoSi-CoSi2 phase transition has been extracted as a function of the cap layer and the annealing temperature. The presence of the Ti cap systematically reduces the rate of CoSi2 formation with respect to the sample with TiN. It has been found that the cap type has an impact on the pre-exponential factor of the growth time but it does not affect the activation energy. As an effect, the silicide capped with Ti has a flat interface with the substrate

Additional details

Identifiers

DOI
10.1016/j.mseb.2004.07.021;
PII
S0921-5107(04)00317-4;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
114-115
Journal Page Range
p. 232-235
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
Symposium B: Material science issues in advanced CMOS source-drain engineering
Acronym
EMRS spring meeting 2004
Dates
24-28 May 2004
Place
Strasbourg (France)

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.