Published October 9, 2006 | Version v1
Journal article Metadata-only

Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator

Creators

  • 1. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan)
  • 2. Institute for Material Research, Tohoku University-CREST-JST, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
  • 3. Department of Physics, Graduate School of Science, Tohoku University-CREST-JST, 6-3 Aoba Aramaki Aoba-ku, Sendai, Miyagi 980-8578 (Japan)

Description

High quality BaTiO3 thin-film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant ε of 280 esu for the prepared BaTiO3 thin-film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2. This is the highest carrier number so far obtained in organic field-effect transistors (FETs). Other important parameters of rubrene single crystal FETs on BTO/Nb-STO are described in comparison with those on SiO2/doped-Si

Additional details

Identifiers

DOI
10.1063/1.2360207;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
89
Journal Issue
15
Journal Page Range
p. 152110-152110.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38023948
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ABLATION; BARIUM COMPOUNDS; CARRIER DENSITY; DIELECTRIC MATERIALS; DOPED MATERIALS; EPITAXY; FIELD EFFECT TRANSISTORS; LAYERS; MONOCRYSTALS; PERMITTIVITY; SILICON OXIDES; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; FILMS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2006 American Institute of Physics