Some properties of n-inversion layers at grain boundaries in InSb bicrystals

The influence of the bulk doping and the tilt angle of the InSb bicrystals on the properties of the space charge layer adjacent to symmetrical grain boundaries in p-type InSb has been studied theoretically by some classical calculations on the basis of a simple grain boundary model. Subband ground levels, Fermi energy and subband occupation as functions of total electron density n/sub s/ give evidence that three subbands must be occupied. Lower values of n/sub s/ may be produced by decreasing the tilt angle of bicrystals