Published December 23, 2002
| Version v1
Journal article
Theoretical study of structures of Ga5N5 cluster
Creators
Description
The structures and energies of a Ga5N5 cluster have been calculated using a full-potential linear-muffin-tin-orbital (FP-LMTO) method, combined with molecular dynamics technique. Twenty-four structures for a Ga5N5 cluster have been obtained. The most stable structure is a C1 planar structure with a N3 subunit. The Ga5N5 clusters show a preference for a N3 subunit, revealing the same behavior as in the Ga3N3 and Ga4N4 clusters. The existence of strong N-N bonds dominates the structure of a Ga5N5 cluster. Through the calculation of the density of states we found that the most stable structure of Ga5N5 clusters presented semiconductor-like properties
Additional details
Identifiers
- PII
- S0375960102014159;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 306
- Journal Issue
- 1
- Journal Page Range
- p. 57-61
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36084185
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL BONDS; GALLIUM NITRIDES; MOLECULAR CLUSTERS; MOLECULAR DYNAMICS METHOD; MUFFIN-TIN POTENTIAL
- Descriptors DEC
- CALCULATION METHODS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; POTENTIALS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.