Published December 23, 2002 | Version v1
Journal article

Theoretical study of structures of Ga5N5 cluster

Description

The structures and energies of a Ga5N5 cluster have been calculated using a full-potential linear-muffin-tin-orbital (FP-LMTO) method, combined with molecular dynamics technique. Twenty-four structures for a Ga5N5 cluster have been obtained. The most stable structure is a C1 planar structure with a N3 subunit. The Ga5N5 clusters show a preference for a N3 subunit, revealing the same behavior as in the Ga3N3 and Ga4N4 clusters. The existence of strong N-N bonds dominates the structure of a Ga5N5 cluster. Through the calculation of the density of states we found that the most stable structure of Ga5N5 clusters presented semiconductor-like properties

Additional details

Identifiers

PII
S0375960102014159;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
306
Journal Issue
1
Journal Page Range
p. 57-61
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36084185
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMICAL BONDS; GALLIUM NITRIDES; MOLECULAR CLUSTERS; MOLECULAR DYNAMICS METHOD; MUFFIN-TIN POTENTIAL
Descriptors DEC
CALCULATION METHODS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; POTENTIALS

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.