Published May 2002
| Version v1
Journal article
Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN
Creators
- Pearton, S.J.1, 2, 3, 4, 5, 6, 7, 8, 9
- Overberg, M.E.1, 2, 3, 4, 5, 6, 7, 8, 9
- Thaler, G.1, 2, 3, 4, 5, 6, 7, 8, 9
- Abernathy, C.R.1, 2, 3, 4, 5, 6, 7, 8, 9
- Theodoropoulou, N.1, 2, 3, 4, 5, 6, 7, 8, 9
- Hebard, A.F.1, 2, 3, 4, 5, 6, 7, 8, 9
- Chu, S.N.G.1, 2, 3, 4, 5, 6, 7, 8, 9
- Wilson, R.G.1, 2, 3, 4, 5, 6, 7, 8, 9
- Zavada, J.M.1, 2, 3, 4, 5, 6, 7, 8, 9
- Polyakov, A.Y.1, 2, 3, 4, 5, 6, 7, 8, 9
- Osinsky, A.V.1, 2, 3, 4, 5, 6, 7, 8, 9
- Norris, P.E.1, 2, 3, 4, 5, 6, 7, 8, 9
- Chow, P.P.1, 2, 3, 4, 5, 6, 7, 8, 9
- Wowchack, A.M.1, 2, 3, 4, 5, 6, 7, 8, 9
- Hove, J.M. van1, 2, 3, 4, 5, 6, 7, 8, 9
- Park, Y.D.1, 2, 3, 4, 5, 6, 7, 8, 9
- 1. Department of Physics, Seoul National University, Seoul (Korea, Republic of)
- 2. Corning Applied Technologies, Woburn, Massachusetts 01801 (United States)
- 3. SVT Associates, Eden Prairie, Minnesota 55344 (United States)
- 4. Institute of Rare Metals, Moscow (Russian Federation)
- 5. Army Research Office, Research Triangle Park, North Carolina 27709 (United States)
- 6. Stevenson Ranch, California 95131 (United States)
- 7. Agere Systems, Murray Hill, New Jersey 07974 (United States)
- 8. Department of Physics, University of Florida, Gainesville, Florida 32611 (United States)
- 9. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Description
The magnetization of p-GaN or p-AlGaN/GaN superlattices was measured after implantation with high doses (3-5x1016 cm-2) of Mn, Fe, or Ni and subsequent annealing at 700-1000 deg. C. The samples showed ferromagnetic contributions below temperatures ranging from 190-250 K for Mn to 45-185 K for Ni and 80-250 K for Fe. The use of superlattices to enhance the hole concentration did not produce any change in ferromagnetic ordering temperature. No secondary phase formation was observed by x-ray diffraction, transmission electron microscopy, or selected area diffraction pattern analysis for the doses we employed
Additional details
Identifiers
- DOI
- 10.1116/1.1465449;
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Journal Volume
- 20
- Journal Issue
- 3
- Journal Page Range
- p. 721-724
- ISSN
- 0734-2101
- CODEN
- JVTAD6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34072386
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; FERROMAGNETISM; GALLIUM NITRIDES; ION IMPLANTATION; IRON; MANGANESE; NICKEL; P-TYPE CONDUCTORS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; GALLIUM COMPOUNDS; MAGNETISM; MATERIALS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2002 American Vacuum Society.