Published October 1990
| Version v1
Journal article
The change of physical and chemical properties of p-silicon under the effect of high energy electrons
Creators
- 1. Gosudarstvennyj Komitet po Ispol'zovaniyu Atomnoj Ehnergii SSSR, Moscow (USSR). Inst. Atomnoj Ehnergii
Description
Short note
Additional details
Additional titles
- Original title (Russian)
- Изменение физико-химических свойств p-кремния под действием электронов большой энергии
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 26
- Journal Issue
- 10
- Series
- Neorg. Mater.
- Journal Page Range
- 2210-2211
- CODEN
- NEOMB
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 23041871
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANODIZATION; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ETCHING; FILMS; MEV RANGE 10-100; MONOCRYSTALS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- BEAMS; CHEMICAL COATING; CORROSION PROTECTION; CRYSTALS; DEPOSITION; ELECTRICAL PROPERTIES; ELECTROCHEMICAL COATING; ELECTROLYSIS; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; MATERIALS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SURFACE COATING