Published May 20, 2020 | Version v1
Journal article

An overview of phase-change memory device physics

  • 1. IBM Research—Zurich, Säumerstrasse 4, 8803 Rüschlikon (Switzerland)

Description

Phase-change memory (PCM) is an emerging non-volatile memory technology that has recently been commercialized as storage-class memory in a computer system. PCM is also being explored for non-von Neumann computing such as in-memory computing and neuromorphic computing. Although the device physics related to the operation of PCM have been widely studied since its discovery in the 1960s, there are still several open questions relating to their electrical, thermal, and structural dynamics. In this article, we provide an overview of the current understanding of the main PCM device physics that underlie the read and write operations. We present both experimental characterization of the various properties investigated in nanoscale PCM devices as well as physics-based modeling efforts. Finally, we provide an outlook on some remaining open questions and possible future research directions. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/ab7794

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
53
Journal Issue
21
Journal Page Range
[27 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52055137
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
COMPUTERIZED SIMULATION; COMPUTERS; MEMORY DEVICES; NANOSTRUCTURES
Descriptors DEC
SIMULATION