Published 2003 | Version v1
Journal article

Magnetic properties of GaMnAs single layers and GaInMnAs superlattices investigated at low temperature and high magnetic field

  • 1. Groupe d'Etude des Semiconducteurs CC074, Universite Montpellier (II), Montpellier (France)
  • 2. Max-Lab, Lund University Lund (Sweden)
  • 3. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 4. Niels Bohr Institute fAFG, Oersted Laboratory, University of Copenhagen, Copenhagen (Denmark)
  • 5. High Magnetic Field Laboratory, CNRS-MPI, Grenoble (France)
  • 6. Uppsala University, Uppsala (Sweden)

Description

Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transformation. In GaMnAs/InGaAs superlattice beside the Curie temperature (Tc ∼ 40 K), a new phase transformation is observed close to 13 K. (author)

Additional details

Publishing Information

Journal Title
Acta Physica Polonica. Series A
Journal Volume
103
Journal Issue
6
Journal Page Range
p. 613-619
ISSN
0587-4246

Conference

Title
32. International School on Physics of Semiconducting Compounds
Dates
30 May - 6 Jun 2003
Place
Jaszowiec (Poland)

Optional Information

Notes
11 refs, 5 figs