Synthesis of new class of semiconductor solid solutions on the basis of molecular silicon and germanium at relatively low temperatures

The method of obtaining the new solid solutions on the basis of molecular silicon or germanium and compounds A3B5 and A2B6 in a single technological cycle based on a conception [8] was discussed. The new solid solutions differ from solid solutions obtained on the basis of elementary atomic semiconductors. The technological regimes of growth of thin epitaxial layers of A2B6 (ZnS as an example) on silicon substrates and the results of investigation of distribution of solid (Si2)1-x(ZnS)x solution components were presented. (authors)