Published December 1978 | Version v1
Journal article

Morphology and growth mechanism of vapor grown Cd crystals as affected by Bi impurity

  • 1. Science Univ. of Tokyo (Japan). Faculty of Engineering

Description

The effects of Bi impurity on the morphology and growth mechanism of (physical) vapor-deposited Cd crystals were investigated. Scanning electron microscopic observation revealed, for the first time, hexagonal prismatic Cd crystals which were grown on the Bi contaminated pyrex glass tube wall. This kind of morphology does not appear in the case of pure Cd without the impurity Bi. The top of the hexagonal prismatic crystal was usually rounded hemispherically. X-ray microprobe investigations showed that the tip of the crystals contained about 57 wt% Bi. It was concluded that the Cd hexagonal prismatic crystals grow by the mechanism of vapor-liquid-solid with the impurity Bi. (Auth.)

Additional details

Publishing Information

Journal Title
J. Cryst. Growth
Journal Volume
45
Journal Issue
1
Series
J. Cryst. Growth.
Journal Page Range
13-16
ISSN
0022-0248

Conference

Title
4. international conference on vapour growth and epitaxy.
Dates
9 - 13 Jul 1978.
Place
Nagoya, Japan.

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
10451639
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BISMUTH; CADMIUM; CHEMICAL ANALYSIS; CRYSTAL GROWTH; CRYSTALS; DEPOSITION; ELECTRON MICROSCOPY; MICROANALYSIS; TRACE AMOUNTS; VAPORS; X RADIATION
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTS; FLUIDS; GASES; IONIZING RADIATIONS; METALS; MICROSCOPY; RADIATIONS