Published December 1978
| Version v1
Journal article
Morphology and growth mechanism of vapor grown Cd crystals as affected by Bi impurity
Creators
- 1. Science Univ. of Tokyo (Japan). Faculty of Engineering
Description
The effects of Bi impurity on the morphology and growth mechanism of (physical) vapor-deposited Cd crystals were investigated. Scanning electron microscopic observation revealed, for the first time, hexagonal prismatic Cd crystals which were grown on the Bi contaminated pyrex glass tube wall. This kind of morphology does not appear in the case of pure Cd without the impurity Bi. The top of the hexagonal prismatic crystal was usually rounded hemispherically. X-ray microprobe investigations showed that the tip of the crystals contained about 57 wt% Bi. It was concluded that the Cd hexagonal prismatic crystals grow by the mechanism of vapor-liquid-solid with the impurity Bi. (Auth.)
Additional details
Publishing Information
- Journal Title
- J. Cryst. Growth
- Journal Volume
- 45
- Journal Issue
- 1
- Series
- J. Cryst. Growth.
- Journal Page Range
- 13-16
- ISSN
- 0022-0248
Conference
- Title
- 4. international conference on vapour growth and epitaxy.
- Dates
- 9 - 13 Jul 1978.
- Place
- Nagoya, Japan.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 10451639
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH; CADMIUM; CHEMICAL ANALYSIS; CRYSTAL GROWTH; CRYSTALS; DEPOSITION; ELECTRON MICROSCOPY; MICROANALYSIS; TRACE AMOUNTS; VAPORS; X RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; FLUIDS; GASES; IONIZING RADIATIONS; METALS; MICROSCOPY; RADIATIONS