Published 1987 | Version v1
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On the diffusion process of irradiation-induced point defects in the stress field of a moving dislocation

  • 1. Commission of the European Communities, Ispra (Italy). Joint Research Centre

Description

The cellular model of a dislocation is used for an investigation of the time-dependent diffusion process of irradiation-induced point defects interacting with the stress field of a moving dislocation. An analytic solution is given taking into account the elastic interaction due to the first-order size effect and the stress-induced interaction, the kinematic interaction due to the dislocation motion as well as the presence of secondary neutral sinks. The results for the space and time-dependent point defect concentration, represented in terms of Mathieu-Bessel and Mathieu-Hankel functions, emphasize the influence of the parameters which have been taken into consideration. Proceeding from these solutions, formulae for the diffusion flux reaching unit length of the dislocation, which plays an important role with regard to void swelling and irradiation-induced creep, are derived

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Additional details

Publishing Information

Imprint Pagination
23 p.
Report number
EUR--11231

INIS

Country of Publication
European Commission (EC), Brussels (Belgium)
Country of Input or Organization
European Commission (EC), Brussels (Belgium)
INIS RN
20004461
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANALYTICAL SOLUTION; DIFFUSION; DISLOCATIONS; MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; STRESSES; TIME DEPENDENCE
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS; RADIATION EFFECTS