On the diffusion process of irradiation-induced point defects in the stress field of a moving dislocation
- 1. Commission of the European Communities, Ispra (Italy). Joint Research Centre
Description
The cellular model of a dislocation is used for an investigation of the time-dependent diffusion process of irradiation-induced point defects interacting with the stress field of a moving dislocation. An analytic solution is given taking into account the elastic interaction due to the first-order size effect and the stress-induced interaction, the kinematic interaction due to the dislocation motion as well as the presence of secondary neutral sinks. The results for the space and time-dependent point defect concentration, represented in terms of Mathieu-Bessel and Mathieu-Hankel functions, emphasize the influence of the parameters which have been taken into consideration. Proceeding from these solutions, formulae for the diffusion flux reaching unit length of the dislocation, which plays an important role with regard to void swelling and irradiation-induced creep, are derived
Availability note (English)
MF available from INIS under the Report Number.
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Additional details
Publishing Information
- Imprint Pagination
- 23 p.
- Report number
- EUR--11231
INIS
- Country of Publication
- European Commission (EC), Brussels (Belgium)
- Country of Input or Organization
- European Commission (EC), Brussels (Belgium)
- INIS RN
- 20004461
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANALYTICAL SOLUTION; DIFFUSION; DISLOCATIONS; MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; STRESSES; TIME DEPENDENCE
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS; RADIATION EFFECTS