Published July 2014 | Version v1
Journal article Metadata-only

MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Creators

  • 1. Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan)
  • 2. Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan)
  • 3. Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan)
  • 4. NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

Description

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.201300582

Additional details

Identifiers

DOI
10.1002/pssc.201300582;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
11
Journal Issue
7-8
Journal Page Range
p. 1182-1185
ISSN
1610-1642

Conference

Title
16. International conference on II-VI compounds and related materials
Acronym
II-VI 2013
Dates
9-13 Sep 2013
Place
Nagahama (Japan)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
45087886
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMPUTERIZED SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; GRAIN ORIENTATION; MOLECULAR BEAM EPITAXY; OPACITY; SAPPHIRE; SUBSTRATES; X-RAY DIFFRACTION; ZINC TELLURIDES
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; CORUNDUM; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; MICROSTRUCTURE; MINERALS; OPTICAL PROPERTIES; ORIENTATION; OXIDE MINERALS; PHYSICAL PROPERTIES; SCATTERING; SIMULATION; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS

Optional Information

Notes
With 4 figs., 18 refs.