Published 2010 | Version v1
Journal article

Efficiency Improved by H2 Forming Gas Treatment for Si-Based Solar Cell Applications

  • 1. Department of Electrical Engineering, National Taiwan Ocean University, No.2 Pei-Ning Road, Keelung 20224 (China)
  • 2. Photovoltaics Technology Center, Industrial Technology Research Institute, No.195 Chung Hsing Road, 4 Sec. Chu Tung, Hsin Chu 31061 (China)
  • 3. Department of Microelectronic Engineering, National Kaohsiung Marine University, No.142 Haijhuan Road, Kaohsiung 81143 (China)
  • 4. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095 (United States)

Description

The photovoltaic (PV) effects have been investigated and improved using efficient treatments both on single-crystalline (sc) and on multi crystalline (mc) silicon (Si) solar cells. The major effect of forming gas (FG) treatment on solar cell performance is the fill-factor values, which increase 3.75% and 8.28%, respectively, on sc-Si and mc-Si solar cells. As for the optimal 15%-H2 ratio and 40-minute FG treatment, the conversion efficiency values drastically increase to 14.89% and 14.31%, respectively, for sc- and mc-Si solar cells. Moreover, we can measure the internal quantum efficiency (IQE) values increase with H2-FG treatment under visible wavelength (400-900 nm) radiation. Thus based on the work in this research, we confirm that H2 passivation has become crucial both in PV as well as in microelectronics fields. Moreover, the developed mc-Si solar cell by proper H2 FG treatment is quite suitable for commercial applications.

Additional details

Publishing Information

Journal Title
International Journal of Photoenergy (Print)
Journal Volume
2010
Journal Issue
2010
Journal Page Range
p. 6
ISSN
1110-662X