Luminescence of CdMnTe/CdMgTe structures with periodically arranged narrow-gap inclusions
- 1. St. Petersburg State University, Fock Institute of Physics (Russian Federation)
- 2. Polish Academy of Sciences, Institute of Physics (Poland)
Description
The study is concerned with the excitonic and intracenter emission spectra of planar structures with periodically arranged Cd0.9Mn0.1Te layers (with a nominal thickness corresponding to one monolayer) separated by Cd0.5Mg0.5Te barriers with different thicknesses. The complex structure of the spectra and their variations in the temperature range from 5 to 80 K are indicative of the inhomogeneity of the Cd0.9Mn0.1Te layers, the important role of vertical diffusion, and the correlation between irregularities in the direction of growth at a small spacing between the narrow-gap Cd0.9Mn0.1Te layers. A substantial factor controlling the spectrum and quantum efficiency of excitonic emission is the relation between the exciton radius and the period of the structure.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 46
- Journal Issue
- 5
- Journal Page Range
- p. 637-640
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129361
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPLEXES; DIFFUSION; EMISSION SPECTRA; INCLUSIONS; LAYERS; LUMINESCENCE; PERIODICITY; QUANTUM EFFICIENCY; THICKNESS
- Descriptors DEC
- DIMENSIONS; EFFICIENCY; EMISSION; PHOTON EMISSION; SPECTRA; VARIATIONS
Optional Information
- Copyright
- Copyright (c) 2012 Pleiades Publishing, Ltd.