Published May 2012 | Version v1
Journal article

Luminescence of CdMnTe/CdMgTe structures with periodically arranged narrow-gap inclusions

  • 1. St. Petersburg State University, Fock Institute of Physics (Russian Federation)
  • 2. Polish Academy of Sciences, Institute of Physics (Poland)

Description

The study is concerned with the excitonic and intracenter emission spectra of planar structures with periodically arranged Cd0.9Mn0.1Te layers (with a nominal thickness corresponding to one monolayer) separated by Cd0.5Mg0.5Te barriers with different thicknesses. The complex structure of the spectra and their variations in the temperature range from 5 to 80 K are indicative of the inhomogeneity of the Cd0.9Mn0.1Te layers, the important role of vertical diffusion, and the correlation between irregularities in the direction of growth at a small spacing between the narrow-gap Cd0.9Mn0.1Te layers. A substantial factor controlling the spectrum and quantum efficiency of excitonic emission is the relation between the exciton radius and the period of the structure.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
46
Journal Issue
5
Journal Page Range
p. 637-640
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43129361
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPLEXES; DIFFUSION; EMISSION SPECTRA; INCLUSIONS; LAYERS; LUMINESCENCE; PERIODICITY; QUANTUM EFFICIENCY; THICKNESS
Descriptors DEC
DIMENSIONS; EFFICIENCY; EMISSION; PHOTON EMISSION; SPECTRA; VARIATIONS

Optional Information

Copyright
Copyright (c) 2012 Pleiades Publishing, Ltd.