Optimizing back surface field for improving V _oc of (Al)GaInP solar cell

GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of V _oc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells. (paper)