Regrowth behavior of ion-implanted amorphous layers on <111> silicon

The regrowth of Si crystal from amorphous layers created by Si implantation into <111>, <100>, and <110> Si was studied. Channeling effect measurements show that the growths on the <110> and <100> substrates are epitaxial and linear with time. For the <111> samples the growth at 5500C was significantly slower and nonlinear in time and the regrown layer contained a high concentration of defects. TEM micrographs indicate the presence of stacking faults and/or microtwins in the <111> samples