Published July 30, 2012 | Version v1
Journal article

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

  • 1. Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)
  • 2. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
  • 3. Laser Physics Centre, Australian National University, Canberra, ACT 0200 (Australia)
  • 4. Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

Description

Zn-doped Ge2Sb2Te5 phase-change materials have been investigated for phase change memory applications. Zn15.16(Ge2Sb2Te5)84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge2Sb2Te5. The proper Zn atom added into Ge2Sb2Te5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
101
Journal Issue
5
Journal Page Range
p. 051906-051906.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2012 American Institute of Physics