Energy states in short-period symmetrical and asymmetrical superlattices (GaAs)N/(AlAs)M. Boundary conditions dependence

On the basis of obtained experimental data on low-temperature photoluminescence, the numerical modelling of the energy states in symmetrical and asymmetrical short-period superlattices (GaAs)N/(AlAs)M (001) have been carried out. In the framework of the matrix formalism of the envelope function method the tendencies of the miniband spectrum behaviour in the models with different parameterization of boundary conditions have been investigated. It has been shown that proper information about transitions types in materials under consideration can be obtained even for diagonal boundary conditions. The influence of accounting the Γ-X mixing and δ-functional potential at an interface on the structure of miniband spectrum is investigated