Photoluminescence of Er-implanted GaN

Visible green emission has been observed from Er(Erbium)-doped GaN epilayers. Various doses of Er ions were implanted in GaN epilayers by using ion implantation. The optical properties of Er-doped GaN were analyzed by using photoluminescence (PL). Sharp emission lines due to inner 4f shell transitions for Er3+ were observed in the PL spectrum of Er-implanted GaN. The emission spectrum consisted of two narrow green lines, 537 and 558 nm. The green emission lines were identified as Er3+ transitions from the 5H11/2 and the 4S3/2 levels to the 4I15/2 ground state. The stronger peaks in the 5 X 1014 cm-2 sample, together with the relatively higher intensity of the Er3+ luminescence in the lower doped sample, indicate that some damage remains in the 1 X 1015 cm-2 sample.