Published April 5, 2004 | Version v1
Journal article

Effects of domain wall and pinning center on electron transport in ferromagnetic wire

Description

The effects of the domain wall and its pinning center on the electron conduction are studied in a framework of the random phase approximation. We show that the domain wall enhances the resistance due to the spin fluctuation around it. Furthermore, the pinning center plays an important role of suppression of the spin fluctuation, which leads to the reduction of the resistance when the domain wall locates at the pinning center. The results obtained are consistent with the experimental findings

Additional details

Identifiers

DOI
10.1016/j.physleta.2004.02.044;
PII
S037596010400252X;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
324
Journal Issue
1
Journal Page Range
p. 51-55
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36089150
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CHARGED-PARTICLE TRANSPORT; ELECTRONS; FERROMAGNETIC MATERIALS; FLUCTUATIONS; RANDOM PHASE APPROXIMATION; SPIN; WALLS; WIRES
Descriptors DEC
ANGULAR MOMENTUM; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MAGNETIC MATERIALS; MATERIALS; PARTICLE PROPERTIES; RADIATION TRANSPORT; VARIATIONS

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.