Published April 5, 2004
| Version v1
Journal article
Effects of domain wall and pinning center on electron transport in ferromagnetic wire
Creators
Description
The effects of the domain wall and its pinning center on the electron conduction are studied in a framework of the random phase approximation. We show that the domain wall enhances the resistance due to the spin fluctuation around it. Furthermore, the pinning center plays an important role of suppression of the spin fluctuation, which leads to the reduction of the resistance when the domain wall locates at the pinning center. The results obtained are consistent with the experimental findings
Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2004.02.044;
- PII
- S037596010400252X;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 324
- Journal Issue
- 1
- Journal Page Range
- p. 51-55
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36089150
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHARGED-PARTICLE TRANSPORT; ELECTRONS; FERROMAGNETIC MATERIALS; FLUCTUATIONS; RANDOM PHASE APPROXIMATION; SPIN; WALLS; WIRES
- Descriptors DEC
- ANGULAR MOMENTUM; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MAGNETIC MATERIALS; MATERIALS; PARTICLE PROPERTIES; RADIATION TRANSPORT; VARIATIONS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.