Published September 26, 1994
| Version v1
Journal article
Wake fields in semiconductor plasmas
Creators
- 1. International Centre for Theoretical Physics, Trieste (Italy)
- 2. Institute for Fusion Studies, University of Texas at Austin, Austin, Texas 78712 (United States)
Description
It is shown that an intense short laser pulse propagating through a semiconductor plasma will generate longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for example, InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 73
- Journal Issue
- 13
- Journal Page Range
- p. 1837-1840.
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26019020
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- LASER-PRODUCED PLASMA; NONLINEAR OPTICS; PLASMA DIAGNOSTICS; PLASMA WAVES; SEMICONDUCTOR MATERIALS; SOLID-STATE PLASMA; WAKEFIELD ACCELERATORS
- Descriptors DEC
- ACCELERATORS; LINEAR ACCELERATORS; MATERIALS; OPTICS; PLASMA