Published 1989
| Version v1
Journal article
A study on phase transformation of As heavily implanted Si during post-processing following rapid thermal annealing
Description
The precipitation of As atoms in Si during post-processing following a rapid thermal annealing is described in terms of a spinodal decomposition instead of clustering. (author)
Additional details
Publishing Information
- Journal Title
- Vacuum
- Journal Volume
- 39
- Journal Issue
- 2-4
- Series
- Vacuum.
- Journal Page Range
- 159-162
- ISSN
- 0042-207X
- CODEN
- VACUA
Conference
- Title
- international symposium on applications of ion beams produced by small accelerators.
- Acronym
- Ion beam interactions with matter
- Dates
- 20-24 Oct 1987.
- Place
- Jinan (China).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 20053897
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ARSENIC IONS; ATOMIC DISPLACEMENTS; DIFFUSION; DISLOCATIONS; DOPED MATERIALS; ION IMPLANTATION; MICROSTRUCTURE; PHASE TRANSFORMATIONS; PRECIPITATION; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; IONS; LINE DEFECTS; MATERIALS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMIMETALS; SEPARATION PROCESSES