Published 2011
| Version v1
Miscellaneous
Simulation of effect of ionizing radiation on metal-dielectric-semiconductor structures
- 1. MGTU im. N.Eh. Baumana, Kaluzhskij Filial, Kaluga (Russian Federation)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Моделирование воздействия ионизирующих излучений на структуры металл-диэлектрик-полупроводник
Publishing Information
- Publisher
- Universitetskaya kniga
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Summaries of reports of XLI International conference on physics of interactions of charged particles with crystals
- Imprint Pagination
- 211 p.
- Journal Page Range
- p. 161
- Report number
- INIS-RU--526
Conference
- Title
- 41. International conference on physics of interaction of charged particles with crystals
- Original Conference Title
- XLI mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 31 May - 2 Jun 2011
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 43014911
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- CHARGE STATES; COMPUTERIZED SIMULATION; DIELECTRIC MATERIALS; IONIZATION; IONIZING RADIATIONS; MIS TRANSISTORS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- MATERIALS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS
Optional Information
- Notes
- 1 ref. Imprint:Tezisy dokladov XLI mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami