Design And Performance Of Optical Detectors Fabrication Setup Using Pulsed Laser Deposition (PLD)
- 1. Faculty of Engineering, Tanta University, Tanta (Egypt)
- 2. National Institute of Laser Enhanced Science, Cairo University (Egypt)
Description
PLD system was used in the preparation of nano structured thin layers to be used as optical detectors. Our home made on--axis PLD setup utilizes XeCl excimer laser (308 nm, Pulse duration of 7 ns, repetition rate of 200 Hz). The laser energy is kept at 8 mj, and the vacuum chamber has been pumped to a background pressure of 10-5 mbar. The films can be grown at different substrate temperatures in the range of 25-400 deg. C. The substrate temperature was always kept below 400 deg. C by using advanced temperature control system. The target-to-substrate distance was variable from 2 to 6 cm. SiO2 was used as substrates because of its low refractive index and high transparency in the UV, visible and near infrared ranges of spectra. LIPS technique has been used for plasma diagnoses during film deposition, using a double monochromator provided with photon detector. Homogenous thin films in the order of 20-200 nm thickness were obtained. Moreover, both amorphous and crystalline thin films can be obtained by adjusting the substrate temperature, target--substrate distance, type of substrate and finally pressure of ambient gas.
Additional details
Identifiers
- DOI
- 10.1063/1.3250118;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1172
- Journal Issue
- 1
- Journal Page Range
- p. 53-58
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 7. international conference on laser applications
- Acronym
- ICLA 2009
- Dates
- 17-21 May 2009
- Place
- Cairo (Egypt)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41064053
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABLATION; AMORPHOUS STATE; CRYSTALS; ENERGY BEAM DEPOSITION; EXCIMER LASERS; LASER RADIATION; NANOSTRUCTURES; OPACITY; PERFORMANCE; PHOTODETECTORS; PULSED IRRADIATION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; SUBSTRATES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; DEPOSITION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; FILMS; GAS LASERS; IRRADIATION; LASERS; MICROSCOPY; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SILICON COMPOUNDS; SURFACE COATING
Optional Information
- Notes
- (c) 2009 American Institute of Physics