Published January 2009 | Version v1
Journal article

A 0.18 μm CMOS fluorescent detector system for bio-sensing application

  • 1. State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

Description

A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm2 and consumes 37 mW.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/1/015002

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41079276
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
AMPLIFIERS; ANALOG-TO-DIGITAL CONVERTERS; FLUORESCENCE; IMPEDANCE; PHOTODIODES; SEMICONDUCTOR MATERIALS
Descriptors DEC
ELECTRONIC EQUIPMENT; EMISSION; EQUIPMENT; LUMINESCENCE; MATERIALS; PHOTON EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES