Published 1973
| Version v1
Journal article
A study of thermally oxidized SiO2 surface layers by means of nuclear reactions
Creators
- 1. Institute of Nuclear Research, Warsaw (Poland)
- 2. Instytut Technologii Elektronowej, Warsaw (Poland)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1007/bf02514192;
Publishing Information
- Journal Title
- Journal of Radioanalytical Chemistry
- Journal Volume
- 16
- Journal Issue
- 2
- Series
- J. Radioanal. Chem.
- Journal Page Range
- 627-636
- ISSN
- 0134-0719
INIS
- Country of Publication
- Hungary
- Country of Input or Organization
- Hungary
- INIS RN
- 6174703
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CRYSTALS; DEUTERON REACTIONS; FILMS; MEV RANGE 01-10; MICRO AMP BEAM CURRENTS; MICROSTRUCTURE; NONDESTRUCTIVE ANALYSIS; NUCLEAR REACTION ANALYSIS; OXYGEN; QUANTITY RATIO; SILICON OXIDES; SURFACE PROPERTIES; SURFACES; THICKNESS
- Descriptors DEC
- BEAM CURRENTS; CHALCOGENIDES; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; CURRENTS; DIMENSIONS; ELEMENTS; ENERGY RANGE; MEV RANGE; NONMETALS; NUCLEAR REACTIONS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS
Optional Information
- Notes
- 9 figs.; 10 refs.; 1 table.; Updated automatically by Metadata and Full-Text Enrichment Agent