Research of the total dose irradiation effects of DC/DC power converter used in satellite
Creators
- 1. Graduate School of Chinese Academy of Sciences, Beijing (China)
- 2. Xinjiang Province Key Lab of Electronics Information Material and Device, Urumqi (China)
- 3. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi (China)
- 4. The 8th Institute of 8th Academy, Chinese Space Science and Technology Group Co., Shanghai (China)
Description
In this paper, the total-dose irradiation damage effects and annealing effects of DVHF2812DF and DVTR2815 DC-DC power converters were investigated. The typical electrical parameters, such as input current, output current, output voltage, and input current of inhibition mode, as functions of the total dose with different load (unloaded, 1/4 power loaded, 1/2 power loaded, and full power loaded) and different input voltage (minimum input voltage, typical input voltage, and maximal input voltage) were discussed. We also observed the relationships between these parameters and the annealing time. The experiment results show that when annealing at room temperature, the trapped holes in deeper energy levels annealed little, which results in dramatic changes of the electric parameters of the DVHF2812DF device when irradiated with extra dose irradiation. However, these parameters went back to the initial values when annealing at high temperature. The input current under inhibition mode can be considered as a sensitive parameter in the evaluation of the radiation-hardened levels of the devices. There were more changes of the electric parameters under the full power loaded situation than other conditions. (authors)
Additional details
Publishing Information
- Publisher
- Chinese Nuclear Society
- Imprint Place
- Beijing (China)
- Imprint Title
- Proceedings of 15. national conference on nuclear electronics and nuclear detection technology
- Imprint Pagination
- 750 p.
- Journal Page Range
- p. 573-578
Conference
- Title
- 15. national conference on nuclear electronics and nuclear detection technology
- Dates
- 13 Oct 2010
- Place
- Guiyang (China)
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 47094190
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CAPTURE; COBALT 60; DAMAGE; DC TO DC CONVERTERS; DOSE-RESPONSE RELATIONSHIPS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY LEVELS; GAMMA RADIATION; HOLES; IRRADIATION; RADIATION EFFECTS; SATELLITES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TRAPPING
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; CURRENTS; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; EQUIPMENT; HEAT TREATMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; RADIATIONS; RADIOISOTOPES; TEMPERATURE RANGE; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- 5 figs., 10 refs.