Thermoelastic failure of semiconductor crystals under intensive electron beam

Distributions of elastic stresses in cadmium sulfide crystals appeared under pulsed electron beam radiation are calculated. A one-dimensional problem for a single cadmium sulfide crystal and that grown on a sapphire substrate is considered. A stress distribution in the crystal in a two-dimensional problem that corresponds to crystal irradiation by a finite electron beam is calculated. According to the calculated results the lower boundary of stress amplitudes destructing crystals is found. The dependence of destruction region on the diaphragm shape limited a beam exciting the crystal is considered