Published January 15, 2009 | Version v1
Journal article

Microfluidic pumps employing surface acoustic waves generated in ZnO thin films

  • 1. Electrical Engineering Division, Department of Engineering, University of Cambridge, JJ Thomson Ave., Cambridge CB3 0FA (United Kingdom)
  • 2. Department of Mechanical Engineering, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)
  • 3. Centre for Material Research and Innovation, University of Bolton, Deane Road, Bolton BL3 5AB (United Kingdom)

Description

ZnO thin film based surface acoustic wave (SAW) devices have been utilized to fabricate microfluidic pumps. The SAW devices were fabricated on nanocrystalline ZnO piezoelectric thin films deposited on Si substrates using rf magnetron sputtering and use a Sezawa wave mode for effective droplet motion. The as-deposited ZnO surface is hydrophilic, with a water contact angle of ∼75 deg., which prevents droplet pumping. Therefore, the ZnO surface was coated using a self-assembled monolayer of octadecyltrichlorosilane which forms a hydrophobic surface with a water contact angle of ∼110 deg. Liquid droplets between 0.5 and 1 μl in volume were successfully pumped on the hydrophobic ZnO surface at velocities up to 1 cm s-1. Under acoustic pressure, the water droplet on an hydrophilic surface becomes deformed, and the asymmetry in the contact angle at the trailing and leading edges allow the force acting upon the droplet to be calculated. These forces, which increase with input voltage above a threshold level, are found to be in the range of ∼100 μN. A pulsed rf signal has also been used to demonstrate precision manipulation of the liquid droplets. Furthermore, a SAW device structure is demonstrated in which the ZnO piezoelectric only exists under the input and output transducers. This structure still permits pumping, while avoiding direct contact between the piezoelectric material and the fluid. This is of particular importance for biological laboratory-on-a-chip applications

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
105
Journal Issue
2
Journal Page Range
p. 024508-024508.7
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40059600
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ASYMMETRY; CRYSTAL GROWTH; CRYSTALS; DEPOSITION; DROPLETS; ELECTRIC POTENTIAL; NANOSTRUCTURES; PIEZOELECTRICITY; SEMICONDUCTOR MATERIALS; SOUND WAVES; SPUTTERING; SUBSTRATES; THIN FILMS; TRANSDUCERS; WATER; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; ELECTRICITY; FILMS; HYDROGEN COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLES; ZINC COMPOUNDS

Optional Information

Notes
(c) 2009 American Institute of Physics