Published 2021 | Version v1
Journal article Metadata-only

Influence of radiation on the electrophysical parameters of GaAsP LEDs

Creators

  • 1. National Pedagogical Dragomanov University, Kyiv (Ukraine)
  • 2. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv (Ukraine)

Description

The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2 ) on the main electrophysical parameters of GaAs1-xPx diodes (x = 0.85 – yellow, x = 0.45 – orange) are given. The increase of differential resistance, the series resistance of the base, and barrier potential are revealed. The processes of recovery of the investigated quantities. (author)

Additional details

Additional titles

Original title (Ukrainian)
Vpliv opromyinennya na elektrofyizichnyi parametry svyitlodyiodyiv GaAsP

Publishing Information

Journal Title
Yaderna Fyizika ta Energetika
Journal Issue
v.22/1
Journal Page Range
p. 56-61
ISSN
1818-331X

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
52078490
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; LIGHT EMITTING DIODES; PHYSICAL RADIATION EFFECTS; SOLID SOLUTIONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; DISPERSIONS; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; LEPTON BEAMS; MIXTURES; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SOLUTIONS