Published February 20, 2006
| Version v1
Journal article
Effect of excess plasma on photoelectron spectra of nanoporous GaP
Creators
- 1. UGC-DAE Consortium for Scientific Research, Indore-452017 (India)
- 2. Centre for Advanced Technology, Indore-452013 (India)
Description
A comparative study of the effect of excess plasma on the photoelectron spectra (PES) of crystalline gallium phosphide (GaP) wafer and 'nanoporous' GaP network samples have been carried out. Rigid shift along with large changes in the line shapes of PES of nanoporous GaP have been observed in the presence of secondary light with respect to spectra measured in its absence. In case of GaP wafer, only rigid shift of PES have been observed. The valence bands offset between 'nanoporous' GaP and GaOx is found 2.30 eV at 300 K
Additional details
Identifiers
- DOI
- 10.1063/1.2178218;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 88
- Journal Issue
- 8
- Journal Page Range
- p. 083115-083115.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37082988
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- EV RANGE 01-10; GALLIUM PHOSPHIDES; PHOTOELECTRON SPECTROSCOPY; PLASMA; SEMICONDUCTOR MATERIALS; SPECTRA; SPECTRAL SHIFT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; VALENCE; WALL EFFECTS
- Descriptors DEC
- ELECTRON SPECTROSCOPY; ENERGY RANGE; EV RANGE; GALLIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2006 American Institute of Physics