Published 1998
| Version v1
Miscellaneous
CdSe layers of below critical thickness in ZnSe matrix: Intrinsic morphology and defect formation
- 1. Ioffe Physical-Technical Institute, St. Petersburg (Russian Federation)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 27. International School on Physics of Semiconducting Compounds Jaszowiec '98
- Imprint Pagination
- 175 p.
- Journal Page Range
- p. 47
Conference
- Title
- 27. International School on Physics of Semiconducting Compounds Jaszowiec '98
- Dates
- 7-12 Jun 1998
- Place
- Ustron-Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31013678
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CADMIUM SELENIDES; CRYSTAL DEFECTS; EXCITONS; MEETINGS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIMENSIONS; ELECTRON MICROSCOPY; EMISSION; EPITAXY; FILMS; LUMINESCENCE; MICROSCOPY; PHOTON EMISSION; QUASI PARTICLES; SELENIDES; SELENIUM COMPOUNDS; ZINC COMPOUNDS