Published July 2016 | Version v1
Journal article

Angular dependence of Raman scattering selection rules for long-wavelength optical phonons in short-period GaAs/AlAs superlattices

  • 1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
  • 2. Russian Academy of Sciences, Omsk Scientific Center, Siberian Branch (Russian Federation)

Description

The angular dependence of Raman scattering selection rules for optical phonons in short-period (001) GaAs/AlAs superlattices is calculated and experimentally studied. Experiments are performed using a micro-Raman setup, in the scattering geometry with the wavevectors of the incident and scattered light lying in the plane of superlattices (so-called in-plane geometry). Phonon frequencies are calculated using the Born model taking the Coulomb interaction into account in the rigid-ion approximation. Raman scattering spectra are calculated in the framework of the deformation potential and electro-optical mechanisms. Calculations show an angular dependence of the selection rules for optical phonons with different directions of the wavevectors. Drastic differences in the selection rules are found for experimental and calculated spectra. Presumably, these differences are due to the Fröhlich mechanism in Raman scattering for short-period superlattices.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Experimental and Theoretical Physics
Journal Volume
123
Journal Issue
1
Journal Page Range
p. 163-168
ISSN
1063-7761
CODEN
JTPHES

Optional Information

Copyright
Copyright (c) 2016 Pleiades Publishing, Inc.