Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope
Creators
- 1. APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France)
- 2. CEA, Centre de Saclay, 91191 Gif-Sur-Yvette Cedex (France)
- 3. CSNSM, IN2P3/CNRSand Paris-Sud University, 91405 Orsay Campus (France)
Description
PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1–10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1–10 MeV range.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2016.08.009Additional details
Identifiers
- DOI
- 10.1016/j.nima.2016.08.009;
- PII
- S0168-9002(16)30824-5;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 835
- Journal Page Range
- p. 74-85
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48075732
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CALORIMETERS; CAPACITANCE; COMPTON SPECTROMETERS; COMPUTERIZED SIMULATION; CRYSTALS; ELECTRIC POTENTIAL; ELECTRODES; GAMMA RADIATION; LEAKAGE CURRENT; MEV RANGE 01-10; PAIR SPECTROMETERS; PARTICLE TRACKS; PITCHES; S CODES; SEMICONDUCTOR MATERIALS; SI MICROSTRIP DETECTORS; SILICON; TELESCOPES; THICKNESS
- Descriptors DEC
- COMPUTER CODES; CURRENTS; DIMENSIONS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; GAMMA SPECTROMETERS; IONIZING RADIATIONS; MATERIALS; MEASURING INSTRUMENTS; MEV RANGE; ORGANIC COMPOUNDS; OTHER ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SI SEMICONDUCTOR DETECTORS; SIMULATION; SPECTROMETERS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.