On model of radiation-stimulated recombination of the vacancies with impurity atoms in semiconductors taking into account back reactions for the vacancies and interstitial atoms

In the paper a model of formation of structural defect states in semiconductors caused by the radiation-stimulated recombination of vacancies with impurity atoms has been suggested. An analytical expression for determination of the concentrations of impurities, vacancies and complexes formed at the interactions of vacancies and impurities has been finally obtained. A new model has been suggested, taking into account the back reactions of vacancies with interstitial atoms and additional interactions between interstitial atoms and impurity atoms. For the set of kinetic equations of the model an exact analytic solution has been obtained for the case of equality of recombination rates for the vacancies with impurities and interstitial atoms, at the neglecting of the recombination rates between interstitial and impurity atoms. Numerical calculations of complex's formation have been obtained. (authors)