Influence of neutron radiation dose on annealing behaviour of defects in c-Si

The annealing behaviour of defects in FZ silicon grown in argon atmosphere and irradiated with neutrons has been studied by positron annihilation lifetime and Doppler broadening measurements. For FZ silicon irradiated with different neutron doses, the radiation-induced monovacancy-type defect has very similar annealing behaviour and can be annealed out at 550 degree C, but the concentration of radiation-induced divacancy and the production, concentration and annealing-out temperature of secondary divacancy-and quadrivacancy-type defects are very different. the simple trapping model seems not suitable for FZ silicon irradiated with high neutron dose and annealed at the temperature lower than 500 degree C, but is suitable partially for that irradiated with middle neutron dose