Published May 2003 | Version v1
Journal article

Fabrication of Nb-based superconducting single electron transistor

Description

We have fabricated Nb/(Al-)AlOx/Nb junctions with a single electron transistor (SET) geometry using conventional e-beam lithographic technique. It was possible to reach a clearly defined superconducting gap of 0.75 meV as measured in the current vs. voltage (I-V) characteristic curve, which corresponds to Tc of 4.6 K. The Josephson coupling energy was comparable to the charging energy, EJ∼Ec=30-40 μeV

Additional details

Identifiers

DOI
10.1016/S0921-4526(02)02419-5;
arXiv
arXiv:math/0411079v3;
PII
S0921452602024195;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
329-333
Journal Issue
1-2
Journal Page Range
p. 1519-1520
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
23. international conference on low temperature physics
Dates
20-27 Aug 2002
Place
Hiroshima (Japan)

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.