Published January 28, 2015 | Version v1
Journal article Metadata-only

A study of transport properties in Cu and P doped ZnSb

Creators

  • 1. Department of Physics, University of Oslo, Blindern, P.O. Box 1048, 0316 Oslo (Norway)

Description

ZnSb samples have been doped with copper and phosphorus and sintered at 798 K. Electronic transport properties are interpreted as being influenced by an impurity band close to the valence band. At low Cu dopant concentrations, this impurity band degrades the thermoelectric properties as the Seebeck coefficient and effective mass are reduced. At carrier concentrations above 1 × 1019 cm−3, the Seebeck coefficient in Cu doped samples can be described by a single parabolic band

Additional details

Identifiers

DOI
10.1063/1.4906404;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
117
Journal Issue
4
Journal Page Range
p. 045709-045709.5
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46118888
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANTIMONIDES; CHARGE CARRIERS; CONCENTRATION RATIO; COPPER; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; PHOSPHORUS; THERMOELECTRIC PROPERTIES; VALENCE; ZINC COMPOUNDS
Descriptors DEC
ANTIMONY COMPOUNDS; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; NONMETALS; PHYSICAL PROPERTIES; PNICTIDES; TRANSITION ELEMENTS

Optional Information

Notes
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