Published December 21, 2015 | Version v1
Journal article

High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

  • 1. Data Storage Institute, Agency for Science, Technology and Research - A*STAR (Singapore)
  • 2. Department of Electrical and Computer Engineering, National University of Singapore (Singapore)

Description

Heulser alloys Fe2Cr1−xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
118
Journal Issue
23
Journal Page Range
p. 233906-233906.4
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
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