Published 1988
| Version v1
Book
Control of deposition and surface properties of CuInSe2 thin films for solar cells
Creators
- 1. Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion
Description
The authors describe the surface characteristics of CuInSe2 films deposited in two layers by vacuum evaporation using elemental sources controlled by deposition conditions or modified by postdeposition etching. With the first layer substrate temperature less than 3500C the height of growth defects is reduced to less than 3 μm. For composite films where the Cu content exceeds 26%, the surface morphology has an angular faceted structure which may be associated with the onset of a second, Cu2Se, phase. CuInSe2/(CdZn)S devices fabricated on these films have poor diode characteristics. Specular CuInSe2 films can be produced by etching in a bromine in water solution
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Twentieth IEEE photovoltaic specialists conference, 1988
- Imprint Pagination
- 1671 p.
- Series
- Volume 1-2.
- Journal Page Range
- p. 1510-1514.
Conference
- Title
- 20. IEEE photovoltaic specialists conference.
- Dates
- 26-30 Sep 1988.
- Place
- Las Vegas, NV (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21035299
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COPPER SELENIDES; DEPOSITION; ETCHING; FABRICATION; INDIUM SELENIDES; SOLAR CELLS; SURFACE PROPERTIES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; INDIUM COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-880965--.